Title :
Power semiconductor devices for sub-microsecond laser pulse generation
Author :
Vitins, J. ; Steiner, J.L. ; Schweizer, A. ; Lawatscg, H.
Author_Institution :
ASEA Brown Ltd., Baden, Switzerland
Abstract :
The authors analyze available devices which are anticipated to have a high potential for submicrosecond pulse generation. Highly integrated reverse-conducting thyristors (RCT) and gate turn-off (GTO) thyristors are established as devices of choice. Their switching properties are characterized and the best suited applications conditions are described. A laboratory submicrosecond pulser has been built for both devices and used to compare the RCT and GTO. For practical reasons it is found that the RCT has advantages over the present-day GTO. The future ideal power semiconductor switch is seen as a combination of both concepts
Keywords :
laser accessories; pulse generators; pulsed power technology; semiconductor switches; thyristor applications; RCT; power semiconductor switch; reverse-conducting thyristors; sub-microsecond laser pulse generation; Free electron lasers; Gas lasers; Insulated gate bipolar transistors; Power lasers; Power semiconductor devices; Power semiconductor switches; Pulse generation; Semiconductor lasers; Thyristors; Voltage;
Conference_Titel :
Power Modulator Symposium, 1988. IEEE Conference Record of the 1988 Eighteenth
Conference_Location :
Hilton Head, SC
DOI :
10.1109/MODSYM.1988.26287
