Title :
Reproducing power hysteresis with circuit envelope simulation
Author :
Yu Zhu ; Klimashov, Oleksey ; Bartle, Dylan
Author_Institution :
Skyworks Solutions Inc., Woburn, MA, USA
Abstract :
Power collapse and related hysteresis have been observed for pHEMT switch in its on state when the input power is swept in a certain power range. The abnormal high power behavior can be explained in terms of self-heating and the temperature dependence of the device performance. By incorporating self-heating and temperature dependence into a simplified model, power collapse is reproduced in harmonic balance simulation. A novel simulation scheme is then proposed to simulate the power hysteresis. By representing the power sweep in the measurement with a time-varying power source, the power hysteresis has been successfully reproduced in circuit envelope simulation.
Keywords :
field effect transistor switches; high electron mobility transistors; hysteresis; semiconductor device models; circuit envelope simulation; device self-heating; harmonic balance simulation; pHEMT switch; power behavior; power collapse; power hysteresis reproduction; power sweep; simplified model; temperature dependence; time-varying power source; Harmonic analysis; Hysteresis; Integrated circuit modeling; PHEMTs; Power measurement; Power system harmonics; Temperature measurement; Circuit simulation; HEMT; device model; hysteresis; switch;
Conference_Titel :
RF and Microwave Conference (RFM), 2013 IEEE International
Conference_Location :
Penang
Print_ISBN :
978-1-4799-2213-0
DOI :
10.1109/RFM.2013.6757264