Coplanar waveguides on gold-doped high resistivity silicon for 67-GHz microwave application

Author

Hashim, Nur Z. I. ; Abuelgasim, Abdelgadir ; De Groot, C.H.

Author_Institution

Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK

fYear

2013

fDate

9-11 Dec. 2013

Firstpage

274

Lastpage

277

Abstract

High resistivity handle wafers suitable for radio frequency integrated circuit application have been achieved through deep level doping compensation technique. Ion implantation and subsequent annealing were used to introduce electrically active gold atoms into silicon resulting in an increase in resistivity up to 70 kOhm-cm from a nominal value of 50 Ohm-cm. At 67GHz, attenuation loss for coplanar waveguides shows a strong reduction from 0.88 dB/mm obtained from un-implanted wafers to 0.3 dB/mm in gold-implanted wafers.

Keywords

annealing; coplanar waveguides; elemental semiconductors; gold; ion implantation; millimetre wave integrated circuits; semiconductor doping; silicon; Au; Si; attenuation loss; coplanar waveguides; deep level doping compensation technique; electrically-active gold atoms; frequency 67 GHz; gold-doped high-resistivity silicon; gold-implanted wafers; ion implantation; radiofrequency integrated circuit application; resistivity 50 ohmcm to 70 kohmcm; subsequent annealing; un-implanted wafers; Attenuation; Conductivity; Coplanar waveguides; Gold; Radio frequency; Silicon; Substrates; attenuation loss; coplanar waveguides; high resistivity silicon; radio frequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference (RFM), 2013 IEEE International

Conference_Location

Penang

Print_ISBN

978-1-4799-2213-0

Type

conf

DOI

10.1109/RFM.2013.6757265

Filename

6757265