• DocumentCode
    3486736
  • Title

    Quantification of power amplifiers´ static and dynamic distortions using frequency domain metrics

  • Author

    Hammi, Oualid

  • Author_Institution
    Electr. Eng. Dept., King Fahd Univ. of Pet. & Miner., Dhahran, Saudi Arabia
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Firstpage
    287
  • Lastpage
    290
  • Abstract
    The quantification of power amplifiers´ distortions during the design stage is important in order to optimize their linearizability. For wideband signals such as LTE-Advanced, time domain characterization of power amplifiers requires specialized and costly measurement equipments. This paper proposes an approach for characterizing the distortions of power amplifiers based on frequency domain metrics. Accordingly, power amplifiers´ static as well as dynamic distortions are quantified using the adjacent channel leakage ratio and the spectrum asymmetry index, respectively. Both metrics are defined in the frequency domain and can be extracted from the measured spectrum at the amplifier´s output. The proposed metrics were applied for the characterization of two Doherty power amplifiers prototypes. The experimental results demonstrate the effectiveness and robustness of the proposed approach in comparing the strength of static distortions and memory effects of power amplifiers prototypes.
  • Keywords
    Long Term Evolution; distortion; radiofrequency power amplifiers; time-domain analysis; wideband amplifiers; Doherty power amplifiers prototypes; LTE-Advanced; adjacent channel leakage ratio; dynamic distortion; frequency domain metrics; measurement equipments; memory effects; spectrum asymmetry index; static distortions; time domain characterization; wideband signals; Bandwidth; Distortion measurement; Frequency-domain analysis; Nonlinear distortion; Power amplifiers; Distortions; frequency domain; memory effects; power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    RF and Microwave Conference (RFM), 2013 IEEE International
  • Conference_Location
    Penang
  • Print_ISBN
    978-1-4799-2213-0
  • Type

    conf

  • DOI
    10.1109/RFM.2013.6757268
  • Filename
    6757268