DocumentCode :
3486865
Title :
New developments in SDS gas source technology for ion implantation
Author :
McManus, James V. ; Edwards, Doug ; Olander, W. Karl ; Kirk, Ralph ; Romig, Terry ; Shi, Jinghong
Author_Institution :
Adv. Technol. Mater. Inc., Danbury, CT, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
804
Lastpage :
807
Abstract :
The safe delivery source (SDS) technology for the low pressure storage and dispensing of arsine and phosphine to ion implanters has been successfully demonstrated in the past two years. The improved safety and productivity enhancement of the SDS has rapidly accelerated its acceptance. Since then there has been a focus to extend and refine the technology based on input from the customer base. This paper discusses improvements in the SDS technology with respect to cylinder lifetime and cylinder shelf-life. Additional data is presented on SDS release rate studies
Keywords :
gases; ion implantation; safety; AsH3; PH3; SDS gas source technology; arsine; cylinder lifetime; cylinder shelf-life; ion implantation; low pressure storage; phosphine; productivity; release rate; safe delivery source; safety; Atmosphere; Engine cylinders; Implants; Instruments; Ion implantation; Kirk field collapse effect; Molecular sieves; Productivity; Semiconductor materials; Stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586586
Filename :
586586
Link To Document :
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