DocumentCode :
3486875
Title :
Electret effects in ferroelectric thin films
Author :
Scott, J.F. ; Zubko, P.
Author_Institution :
Dept. of Earth Sci., Cambridge Univ., UK
fYear :
2005
fDate :
11-14 Sept. 2005
Firstpage :
113
Lastpage :
116
Abstract :
A summary is given of probable electret effects in lead zirconate titanate (PZT), strontium titanate, polyvinylidene fluoride (PVDF), and ZnO:Li. Effects in capacitors in thin-film ferroelectric random access memories (FRAMs) such as imprint, retention, and fatigue can involve electret mechanisms and are exacerbated with radiation damage.
Keywords :
capacitors; electrets; fatigue; ferroelectric storage; ferroelectric thin films; lead compounds; polymers; radiation effects; strontium compounds; zinc compounds; PZT; PbZrO3TiO3; SrTiO3; ZnO:Li; capacitors; electret effects; fatigue; lead zirconate titanate; polyvinylidene fluoride; radiation damage; strontium titanate; thin film ferroelectric random access memories; Capacitors; Electrets; Fatigue; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Strontium; Titanium compounds; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 2005. ISE-12. 2005 12th International Symposium on
Print_ISBN :
0-7803-9116-0
Type :
conf
DOI :
10.1109/ISE.2005.1612331
Filename :
1612331
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3486875
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