• DocumentCode
    3486875
  • Title

    Electret effects in ferroelectric thin films

  • Author

    Scott, J.F. ; Zubko, P.

  • Author_Institution
    Dept. of Earth Sci., Cambridge Univ., UK
  • fYear
    2005
  • fDate
    11-14 Sept. 2005
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    A summary is given of probable electret effects in lead zirconate titanate (PZT), strontium titanate, polyvinylidene fluoride (PVDF), and ZnO:Li. Effects in capacitors in thin-film ferroelectric random access memories (FRAMs) such as imprint, retention, and fatigue can involve electret mechanisms and are exacerbated with radiation damage.
  • Keywords
    capacitors; electrets; fatigue; ferroelectric storage; ferroelectric thin films; lead compounds; polymers; radiation effects; strontium compounds; zinc compounds; PZT; PbZrO3TiO3; SrTiO3; ZnO:Li; capacitors; electret effects; fatigue; lead zirconate titanate; polyvinylidene fluoride; radiation damage; strontium titanate; thin film ferroelectric random access memories; Capacitors; Electrets; Fatigue; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Strontium; Titanium compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 2005. ISE-12. 2005 12th International Symposium on
  • Print_ISBN
    0-7803-9116-0
  • Type

    conf

  • DOI
    10.1109/ISE.2005.1612331
  • Filename
    1612331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3486875