DocumentCode
3486993
Title
Sum and difference frequency mixing in semiconductor heterostructures
Author
Janz, S. ; Dai, H. ; Frlan, E. ; Letourneau, Sylvain ; Chatenoud, F. ; Delage, A. ; Beaulieu, Y. ; van der Meer, P. ; Normandin, R.
Author_Institution
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
328
Abstract
Sum-frequency mixing in a nonlinear waveguide using counter-propagating light beams was first demonstrated more than a decade ago. The subsequent development of quasi-phase matching (QPM) techniques in AlxGa1-xAs heterostructure waveguides has improved the conversion efficiencies such that a variety of applications based on second-harmonic (SH) generation are now feasible. Difference-frequency mixing in an AlxGa1-x As waveguides can also be used to generate tunable CW microwave radiation. The optimization of devices based on QPM SH generation requires the capability to spatially modulate the second-order nonlinearity χ(2). Within the AlxGa1-x As material system, a number of approaches to controlling χ (2) have been explored. The simplest approach is to vary the concentration. Once appropriate materials have been found, the geometry of the heterostructure must be designed to optimize device operation
Keywords
optical frequency conversion; AlGaAs; conversion efficiencies; counter-propagating light beams; difference-frequency mixing; nonlinear waveguides; quasi-phase matching; second-harmonic generation; second-order nonlinearity; semiconductor heterostructures; sum-frequency mixing; Autocorrelation; Frequency; Gallium arsenide; Microwave generation; Nonlinear optics; Optical mixing; Optical reflection; Optical waveguides; Semiconductor waveguides; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586594
Filename
586594
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