DocumentCode :
3487004
Title :
Breaking the simulation barrier: SRAM evaluation through norm minimization
Author :
Dolecek, Lara ; Qazi, Masood ; Shah, Devavrat ; Chandrakasan, Anantha
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA
fYear :
2008
fDate :
10-13 Nov. 2008
Firstpage :
322
Lastpage :
329
Abstract :
With process variation becoming a growing concern in deep submicron technologies, the ability to efficiently obtain an accurate estimate of failure probability of SRAM components is becoming a central issue. In this paper we present a general methodology for a fast and accurate evaluation of the failure probability of memory designs. The proposed statistical method, which we call importance sampling through norm minimization principle, reduces the variance of the estimator to produce quick estimates. It builds upon the importance sampling, while using a novel norm minimization principle inspired by the classical theory of Large Deviations. Our method can be applied for a wide class of problems, and our illustrative examples are the data retention voltage and the read/write failure tradeoff for 6T SRAM in 32 nm technology. The method yields computational savings on the order of 10000x over the standard Monte Carlo approach in the context of failure probability estimation for SRAM considered in this paper.
Keywords :
SRAM chips; estimation theory; failure analysis; importance sampling; minimisation; SRAM components; estimator; failure probability; importance sampling; large deviations theory; memory designs; norm minimization; read-write failure tradeoff; retention voltage; standard Monte Carlo approach; statistical method; Computational modeling; Computer simulation; Discrete event simulation; Failure analysis; Minimization methods; Monte Carlo methods; Probability; Random access memory; Statistical analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4244-2819-9
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2008.4681593
Filename :
4681593
Link To Document :
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