Nonlinear optical and electro-optical characteristics of hybrid AlAs/GaAs multilayered structures

Author

Knigge, Steffen ; Niederland, Dirk ; Wicke, Markus ; Bussek, Peter ; Jager, Dieter

Author_Institution

Fachgebiet Optoelektronik, Gerhard-Mercator-Univ. Duisburg, Germany

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

336

Abstract

In this paper, experimental results on giant electro-optical nonlinearities in a periodic multilayered structure are presented. The device consists of undoped GaAs and AlAs layers with nominal thicknesses of 58 nm and 69 nm, respectively. In summary, it is shown that hybrid multilayered semiconductor structures exhibit clear electro-optical modulation and giant optical nonlinearities leading to optical bistabilities at extremely low optical intensities. Thus, such devices offer potential applications for parallel signal processing

Keywords

aluminium compounds; 58 nm; 65 nm; 69 nm; AlAs-GaAs; clear electro-optical modulation; electro-optical characteristics; extremely low optical intensities; giant electro-optical nonlinearities; giant optical nonlinearities; hybrid AlAs/GaAs multilayered structures; hybrid multilayered semiconductor structures; nominal thicknesses; nonlinear optical characteristics; optical bistabilities; parallel signal processing; periodic multilayered structure; undoped GaAs layers; undoped layers; Electrooptic modulators; Gallium arsenide; Intensity modulation; Lead compounds; Nonlinear optical devices; Nonlinear optics; Optical bistability; Optical modulation; Optical signal processing; Periodic structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586600

Filename

586600