Title :
Solid source MBE growth of lattice matched GaInAsP with phosphorus and arsenic valved cracking cells
Author :
Baillargeon, J.N. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. Reproducible As/P stoichiometric growth was obtained with all solid source MBE. Valved cells containing in-situ generated white phosphorus and arsenic were employed to achieve high optical quality GaInAsP layers on InP and GaAs. Laser diode performance will also be discussed
Keywords :
gallium arsenide; GaInAsP-GaAs; GaInAsP-InP; arsenic; laser diode; lattice matched GaInAsP; optical quality; solid source MBE; stoichiometric growth; valved cracking cells; white phosphorus; Diode lasers; Gallium arsenide; Indium phosphide; Lattices; Solids;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586608
