Refractive index of AlInGaAs layers in the transparent wavelength region

Author

Dejun, Han ; Chan, K.T.

Author_Institution

Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

349

Abstract

Compared with InGaAsP as an optical material system, AlInGaAs possesses advantages like (l) a larger conduction band offset that improves electron confinement; (2) a smaller valence-band discontinuity that alleviates the hole capture problem, resulting in a more efficient carrier sweep out; (3) AlInGaAs is better suited for the realization of continuous graded index separate-confinement-heterostructure (GRIN-SCH) lasers, where very efficient carrier capture process in a thin quantum well active layer has been demonstrated. Although all the devices mentioned above incorporate layers of AllnGaAs, little is known about their refractive index which is essential to optimize those devices. This paper calculates this refractive index in the transparent wavelength region

Keywords

refractive index; AlInGaAs; AlInGaAs layers; optical material; refractive index; transparent wavelength region; Artificial intelligence; Conducting materials; Dielectric constant; Dielectric materials; Free electron lasers; Indium phosphide; Optical device fabrication; Optical materials; Quantum well devices; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586610

Filename

586610