Piezoelectric effect in InGaAs/GaAs quantum wells grown on (111)A GaAs observed by photoluminescence spectroscopy

Author

Vaccaro, P. ; Tominaga, K. ; Hosoda, M. ; Fujita, K. ; Watanabe, T.

Author_Institution

ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

351

Abstract

There has been considerable interest in the optical and electrical properties of InGaAs/GaAs strained quantum wells (SQW) grown on (111) oriented substrates because of the presence of a built-in electric field originating in the piezoelectric effect. If an external electric field opposite to the built-in electric field is applied, a blueshift of the optical transition energies can be observed. In this paper we report the observation of this blueshift by photoluminescence spectroscopy in In _0.2Ga_0.8As/GaAs SQWs grown on (111)A GaAs

Keywords

spectral line shift; (111)A GaAs; GaAs; In_0.2Ga_0.8As-GaAs; blueshift; built-in electric field; optical transition energies; photoluminescence spectroscopy; piezoelectric effect; strained quantum well; Charge carrier processes; Electron optics; Energy states; Gallium arsenide; Indium gallium arsenide; Laboratories; P-i-n diodes; Photoluminescence; Piezoelectric effect; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586611

Filename

586611