• DocumentCode
    3487319
  • Title

    Photoluminescence and electrical properties of Er-doped In2 O3 films

  • Author

    Kim, H.K. ; Li, C.C. ; Nykolak, G. ; Becker, P.C.

  • Author_Institution
    Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
  • Volume
    2
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    353
  • Abstract
    The rapid development of Er-doped silicate glass fiber amplifiers has stimulated a strong interest in rare-earth doped glass materials research. Temperature-stable and host-independent luminescence from rare-earth ions is attractive for various optical applications. In this paper, we report successful incorporation of optically active Er in indium oxide films by RF magnetron sputtering
  • Keywords
    photoluminescence; In2O3:Er; RF magnetron sputtering; electrical properties; indium oxide films; photoluminescence; rare-earth doped materials; Doped fiber amplifiers; Glass; Magnetic materials; Optical fiber amplifiers; Optical films; Optical materials; Particle beam optics; Photoluminescence; Radiofrequency amplifiers; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586612
  • Filename
    586612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3487319