DocumentCode
3487329
Title
Graphene nanoribbon FETs: Technology exploration and CAD
Author
Mohanram, Kartik ; Guo, Jing
Author_Institution
Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX
fYear
2008
fDate
10-13 Nov. 2008
Firstpage
412
Lastpage
415
Abstract
Graphene nanoribbon FETs (GNRFETs) have emerged as a promising candidate for nanoelectronics applications. This paper summarizes (i) current understanding and prospects for GNRFETs as ultimately scaled, ideal ballistic transistors, (ii) physics-based modeling of GNRFETs to support circuit design and CAD, and (iii) variability and defects in GNRs and their impact on GNRFET circuit performance and reliability.
Keywords
CAD; elemental semiconductors; field effect transistors; graphene; nanoelectronics; semiconductor device models; semiconductor device reliability; C; ballistic transistors; circuit design; circuit performance; computer-aided design; graphene nanoribbon FETs; nanoelectronics applications; reliability; Application software; Circuit optimization; FETs; Fabrication; Lattices; MOSFETs; Nanoelectronics; Photonic band gap; Predictive models; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4244-2819-9
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2008.4681607
Filename
4681607
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