Title :
Graphene nanoribbon FETs: Technology exploration and CAD
Author :
Mohanram, Kartik ; Guo, Jing
Author_Institution :
Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX
Abstract :
Graphene nanoribbon FETs (GNRFETs) have emerged as a promising candidate for nanoelectronics applications. This paper summarizes (i) current understanding and prospects for GNRFETs as ultimately scaled, ideal ballistic transistors, (ii) physics-based modeling of GNRFETs to support circuit design and CAD, and (iii) variability and defects in GNRs and their impact on GNRFET circuit performance and reliability.
Keywords :
CAD; elemental semiconductors; field effect transistors; graphene; nanoelectronics; semiconductor device models; semiconductor device reliability; C; ballistic transistors; circuit design; circuit performance; computer-aided design; graphene nanoribbon FETs; nanoelectronics applications; reliability; Application software; Circuit optimization; FETs; Fabrication; Lattices; MOSFETs; Nanoelectronics; Photonic band gap; Predictive models; Thermal conductivity;
Conference_Titel :
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2819-9
Electronic_ISBN :
1092-3152
DOI :
10.1109/ICCAD.2008.4681607
