Title :
Band-gap shift in indium tin oxide
Author :
Vineberg, K.A. ; Berolo, O.
Author_Institution :
Communication Res. Centre, Ottawa, Ont., Canada
fDate :
31 Oct-3 Nov 1994
Abstract :
In this work we report the optical transmittance properties of indium tin oxide (ITO) near the band-gap under different current injection conditions through a thin film. A narrowing of the band-gap is observed as a function of current, consistent with band-tailing effects associated with electron-electron and impurity scattering due to heavy doping in semiconductors. The absorption coefficient dependence on photon energy is verified to be consistent with an M0 Van Hove type of discontinuity in the density of states function
Keywords :
indium compounds; ITO; InSnO; Van Hove discontinuity; absorption coefficient; band gap; band tailing; current injection; density of states; electron-electron scattering; heavy doping; impurity scattering; indium tin oxide; optical transmittance; semiconductor; thin film; Circuits; Integrated optics; Optical modulation; Optical waveguides; Photonic band gap; Tin;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586613
