Title :
Low threshold 1.55 μm quantum well lasers grown with tertiarybutylarsine and tertiarybutylphosphine
Author :
Mathur, Atul ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
In this paper, we report on the performance of compressive strained quaternary InGaAsP quantum well lasers with record thresholds and compare them to InGaAs tensile strained devices with comparable well width and confinement factor. Equally important, these devices were MOCVD grown with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) instead of arsine and phosphine
Keywords :
indium compounds; 1.55 mum; InGaAs; InGaAs tensile strained devices; InGaAsP; MOCVD grown; comparable well width; compressive strained quaternary InGaAsP quantum well lasers; confinement factor; low threshold 1.55 μm quantum well lasers growth; record thresholds; tertiarybutylarsine; tertiarybutylphosphine; Capacitive sensors; Chemical lasers; Density measurement; Laser modes; Lattices; MOCVD; Pulsed laser deposition; Quantum well lasers; Tensile strain; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586622
