Title :
Overlay aware interconnect and timing variation modeling for Double Patterning Technology
Author :
Yang, Jae-seok ; Pan, David Z.
Author_Institution :
Dept. of ECE, Univ. of Texas at Austin, Austin, TX
Abstract :
As double patterning technology (DPT) becomes the only solution for 32-nm lithography process, we need to investigate how DPT affects the performance of a chip. In this paper, we present an efficient modeling of timing variation with overlay which is inevitable for DPT. Our work makes it possible to analyze timing with overlay variables. Since the variation of metal space caused by overlay results in coupling capacitance variation, we first model metal spacing variation with individual overlay sources. Then, all overlay sources are considered to determine the worst timing with coupling capacitance variation. Non-parallel pattern caused by overlay is converted to parallel one with equivalent spacing having the same delay to be applicable of a traditional RC extraction flow. To verify our work, we use identical interconnects having different positions and different layout decompositions. Experimental result shows that the delay has a variation from 7.8% to 9.1% depending on their locations. The well decomposed structure shows only 2.7% delay variation.
Keywords :
delays; integrated circuit interconnections; integrated circuit modelling; lithography; RC extraction flow; coupling capacitance variation; delay variation; double patterning technology; lithography process; metal spacing variation modelling; nonparallel pattern; overlay aware interconnect; size 32 nm; timing variation modeling; Apertures; Capacitance; Conductors; Delay; Lenses; Light sources; Lithography; Shipbuilding industry; Throughput; Timing;
Conference_Titel :
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2819-9
Electronic_ISBN :
1092-3152
DOI :
10.1109/ICCAD.2008.4681619