DocumentCode
3487552
Title
Monolithic integrated multi-wavelength SCH SQW InGaAs/GaAs laser array by shadow masked MOVPE growth
Author
Vermeire, G. ; Vermaerke, F. ; Van Daele, P. ; Demeester, P.
Author_Institution
Dept. of Inf. Technol., Gent Univ., Belgium
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
377
Abstract
An array of InGaAs/GaAs QW lasers emitting between 915 and 960 nm is realised by shadow masked growth. Threshold currents down to 9 mA and quantum efficiencies to 29% have been obtained
Keywords
indium compounds; 29 percent; 9 mA; 915 to 960 nm; InGaAs-GaAs; monolithic integration; multi-wavelength SCH SQW InGaAs/GaAs laser array; quantum efficiencies; shadow masked MOVPE growth; threshold currents; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical arrays; Optical waveguides; Semiconductor laser arrays; Substrates; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586624
Filename
586624
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