Dual-channel strained-layer InGaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD

Author

Lammert, R.M. ; Cockerill, T.M. ; Forbes, D.V. ; Coleman, J.J.

Author_Institution

Mater. Res. Lab., Illinois Univ., Urbana, IL, USA

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

379

Abstract

Selective-area epitaxy has been shown to be an effective way to produce a monolithic multiple-wavelength laser source suitable for wavelength division multiplexing (WDM). In general the channel outputs of multiple-wavelength laser arrays have a spatial separation that is large in comparison to the core diameter of a single mode fiber. Therefore, external coupling is required to combine the outputs into a single fiber. In this work, we report the fabrication of a dual-channel strained-layer, InGaAs-GaAs-AlGaAs quantum well WDM laser with integrated waveguide output coupler by an atmospheric pressure metal-organic chemical vapor deposition (MOCVD) three-step selective-area growth process

Keywords

indium compounds; InGaAs-GaAs-AlGaAs; atmospheric pressure metal-organic chemical vapor deposition; dual-channel strained-layer InGaAs-GaAs-AlGaAs quantum well laser; integrated waveguide output coupler; monolithic multiple-wavelength source; selective-area growth; wavelength division multiplexing; Chemical lasers; Epitaxial growth; Fiber lasers; Laser modes; Optical arrays; Optical device fabrication; Optical fiber couplers; Quantum well lasers; Waveguide lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586625

Filename

586625