Title :
Highly sensitive CMOS passive wake-up circuit
Author :
Cho, Hanjin ; Kim, HyungChul ; Xi, Yao ; Kim, Minsu ; Kwon, Sungwook ; Park, Tajun ; Kim, Haksun ; Yang, Youngoo
Author_Institution :
Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon
Abstract :
We implement a passive wake-up circuit with high voltage sensitivity using standard CMOS technology. We propose voltage multipliers and inverter chain optimized for high voltage sensitivity. The wake-up circuit converts small RF input signals into a DC signal to trigger the interrupt. Using an RF input signal, whose center frequency is 870 MHz and input power is -29.3 dBm, we achieved an output voltage of 0.7 V, enough to trigger on the output. The fully integrated CMOS IC is fabricated using a 0.18 mum standard CMOS process. The chip area is as small as 230 times 190 mum2.
Keywords :
CMOS integrated circuits; voltage multipliers; CMOS technology; IC fabrication; RF input signal; frequency 870 MHz; passive wake-up circuit; size 0.18 mum; voltage 0.7 V; voltage multiplier; CMOS process; CMOS technology; Circuits; Inverters; Protection; RF signals; Radio frequency; Schottky diodes; Threshold voltage; Wireless sensor networks;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958344