Title :
High quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabricated using photo-absorption induced disordering
Author :
McKee, A. ; McLean, C.J. ; Bryce, A.C. ; Button, C. ; De La Rue, R.M. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
31 Oct-3 Nov 1994
Abstract :
Oxide stripe lasers have been fabricated from GaInAs/GaInAsP multi-quantum well material which has undergone various degrees of intermixing by photoabsorption induced disordering (PAID). Blue shifts of up to 160 nm in the lasing spectra are demonstrated
Keywords :
gallium arsenide; 160 nm; GaInAs-GaInAsP; GaInAs/GaInAsP multi-quantum well material; blue shifts; high quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabrication; intermixing; lasing spectra; oxide stripe lasers; photo-absorption induced disordering; Absorption; Fabrication; Indium phosphide; Laser tuning; Optical materials; Photonic band gap; Plasma temperature; Power lasers; Quantum well devices; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586626
