1.55 μm dual polarization lasers containing tensile and compressive strained quantum wells

Author

Mathur, Atul ; Dapkus, P.Daniel

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

2

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

383

Abstract

We have demonstrated lasing in two polarizations in a InP-InGaAsP strained quantum well laser at 1.55 μm and have been able to switch the lasing polarization with change in temperature. The analysis of the lasing behavior of this device aids in the design of polarization insensitive amplifiers and dual polarization-lasers as well as offers insight into the process of carrier capture and leakage in quantum wells

Keywords

indium compounds; 1.55 μm dual polarization lasers; 1.55 mum; InP-InGaAsP; InP-InGaAsP strained quantum well laser; carrier capture; carrier leakage; compressive strained quantum wells; dual polarization-lasers; lasing behavior; lasing polarization switching; polarization insensitive amplifiers; polarizations; tensile strained quantum wells; Charge carrier processes; Electrons; Optical control; Optical polarization; Quantum well lasers; Semiconductor optical amplifiers; Tellurium; Temperature control; Temperature dependence; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586627

Filename

586627