Title :
1.55 μm dual polarization lasers containing tensile and compressive strained quantum wells
Author :
Mathur, Atul ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
We have demonstrated lasing in two polarizations in a InP-InGaAsP strained quantum well laser at 1.55 μm and have been able to switch the lasing polarization with change in temperature. The analysis of the lasing behavior of this device aids in the design of polarization insensitive amplifiers and dual polarization-lasers as well as offers insight into the process of carrier capture and leakage in quantum wells
Keywords :
indium compounds; 1.55 μm dual polarization lasers; 1.55 mum; InP-InGaAsP; InP-InGaAsP strained quantum well laser; carrier capture; carrier leakage; compressive strained quantum wells; dual polarization-lasers; lasing behavior; lasing polarization switching; polarization insensitive amplifiers; polarizations; tensile strained quantum wells; Charge carrier processes; Electrons; Optical control; Optical polarization; Quantum well lasers; Semiconductor optical amplifiers; Tellurium; Temperature control; Temperature dependence; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586627
