• DocumentCode
    3487716
  • Title

    Aiming for thresholdless semiconductor lasers: successful fabrication of 2-D photonic bandgap structures in GaAs/AlGaAs

  • Author

    Krauss, T. ; Song, Y.P. ; Thoms, S. ; Wilkinson, C.D.W. ; DeLaRue, R.M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • Volume
    2
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    391
  • Abstract
    We report the first realization of two-dimensional photonic bandgap structures with a period of λ0/2n in the GaAs/AlGaAs material system. We discuss the lithography and dry etching issues that are important for a successful device implementation of these results
  • Keywords
    gallium arsenide; 2D photonic bandgap structures; GaAs-AlGaAs; GaAs/AlGaAs; dry etching issues; lithography; thresholdless semiconductor lasers; Dry etching; Frequency; Lithography; Optical device fabrication; Photonic band gap; Photonic crystals; Semiconductor lasers; Shape control; Silicon compounds; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586631
  • Filename
    586631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3487716