• DocumentCode
    3487870
  • Title

    Low-transparency-current-density, high-gain 1.3-μm strained-layer InGaAsP/InP quantum-well laser material

  • Author

    Donnelly, J.P. ; Groves, S.H. ; Walpole, J.N. ; Bailey, R.J. ; Woodhouse, J.D. ; Missaggia, L.J. ; Napoleone, A. ; O´Donnell, Frederick J. ; Reeder, R.E.

  • Author_Institution
    Lincoln Lab., MIT, Lexington, MA, USA
  • Volume
    2
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    406
  • Abstract
    High-performance diode laser oscillators and amplifiers require uniform epitaxial structures with low transparency currents and high differential gain. In the paper, the authors present device results that have followed an effort to improve the design and growth of organometallic vapor phase epitaxy (OMVPE) InGaAsP/lnP strained-layer quantum-well (SLQW) material. Broad-area laser characterization shows significant improvement in threshold current density, differential efficiency and modal-gain. Results for ridge-waveguide narrow-stripe lasers, ridge amplifiers, and tapered lasers that give record 1.3 μm power levels with near-diffraction limited beam widths are presented
  • Keywords
    indium compounds; 1.3 mum; InGaAsP-InP; InGaAsP/InP quantum-well laser material; broad-area laser characterization; differential efficiency; diode laser amplifiers; diode laser oscillators; high differential gain; high-gain strained-layer lasers; low transparency currents; modal-gain; near-diffraction limited beam widths; organometallic vapor phase epitaxy; power levels; ridge amplifiers; ridge-waveguide narrow-stripe lasers; strained-layer quantum-well material; tapered lasers; threshold current density; uniform epitaxial structures; Differential amplifiers; Diode lasers; Epitaxial growth; Laser beams; Optical materials; Oscillators; Power amplifiers; Power lasers; Quantum well lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586640
  • Filename
    586640