Title :
Low-transparency-current-density, high-gain 1.3-μm strained-layer InGaAsP/InP quantum-well laser material
Author :
Donnelly, J.P. ; Groves, S.H. ; Walpole, J.N. ; Bailey, R.J. ; Woodhouse, J.D. ; Missaggia, L.J. ; Napoleone, A. ; O´Donnell, Frederick J. ; Reeder, R.E.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
High-performance diode laser oscillators and amplifiers require uniform epitaxial structures with low transparency currents and high differential gain. In the paper, the authors present device results that have followed an effort to improve the design and growth of organometallic vapor phase epitaxy (OMVPE) InGaAsP/lnP strained-layer quantum-well (SLQW) material. Broad-area laser characterization shows significant improvement in threshold current density, differential efficiency and modal-gain. Results for ridge-waveguide narrow-stripe lasers, ridge amplifiers, and tapered lasers that give record 1.3 μm power levels with near-diffraction limited beam widths are presented
Keywords :
indium compounds; 1.3 mum; InGaAsP-InP; InGaAsP/InP quantum-well laser material; broad-area laser characterization; differential efficiency; diode laser amplifiers; diode laser oscillators; high differential gain; high-gain strained-layer lasers; low transparency currents; modal-gain; near-diffraction limited beam widths; organometallic vapor phase epitaxy; power levels; ridge amplifiers; ridge-waveguide narrow-stripe lasers; strained-layer quantum-well material; tapered lasers; threshold current density; uniform epitaxial structures; Differential amplifiers; Diode lasers; Epitaxial growth; Laser beams; Optical materials; Oscillators; Power amplifiers; Power lasers; Quantum well lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586640
