DocumentCode
3487903
Title
On the modeling of resistance in graphene nanoribbon (GNR) for future interconnect applications
Author
Ragheb, Tamer ; Massoud, Yehia
Author_Institution
Electr. & Comput. Eng. Dept., Rice Univ., Houston, TX
fYear
2008
fDate
10-13 Nov. 2008
Firstpage
593
Lastpage
597
Abstract
In this paper, we present a comprehensive model for the resistance in graphene nanoribbon (GNR) interconnects. We use the recent experimental and theoretical results to model the impact of stacking of graphene layers in multi-layer GNR interconnects. We compare the resistance of GNR interconnects with both single-walled carbon nanotube (SWCNT) bundle interconnects and conventional copper interconnects. Our simulation results demonstrate the performance superiority of multi-layer GNR interconnects over conventional copper interconnects at small widths (Lt 15 nm). Consequently, multi-layer GNR interconnects demonstrate a great potential to replace conventional copper interconnects in future technologies.
Keywords
carbon; electrical resistivity; interconnections; multilayers; nanostructured materials; C; copper interconnects; graphene nanoribbon; multi-layer interconnects; resistance; single-walled carbon nanotube; Atomic layer deposition; Bonding; Carbon nanotubes; Copper; Electric resistance; Fabrication; Nonhomogeneous media; Scattering; Shape control; Stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4244-2819-9
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2008.4681637
Filename
4681637
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