A wideband and low phase noise CMOS Voltage Controlled Oscillator

Author

Guo, Xuefeng ; Wang, Zhigong ; Tsang, KF ; Lee, Wc

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, a wideband LC cross-coupled VCO is designed and realized with the TSMC 0.18 mum CMOS technology. By incorporating band switching capacitors, the overall tuning frequency range is divided into 16 bands, covering 1.17-1.9 GHz (47%). A linear time variant (LTV) model is used to quantitatively analyze voltage biased oscillators. In order to minimize the phase noise, the size of the MOSFET and the tank inductance are optimized, and a noise filtering technique is adopted.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; integrated circuit design; integrated circuit noise; phase noise; voltage-controlled oscillators; MOSFET; TSMC CMOS technology; band switching capacitors; frequency 1.7 GHz to 1.9 GHz; linear time variant model; low-phase noise voltage controlled oscillator; noise filtering technique; quantitative analysis; size 0.18 mum; tank inductance; wideband LC cross-coupled VCO design; CMOS technology; Capacitors; Frequency conversion; Inductance; MOSFET circuits; Phase noise; Semiconductor device modeling; Tuning; Voltage-controlled oscillators; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958360

Filename

4958360