DocumentCode
3488012
Title
A 50 mJ per pulse transversely diode-pumped Yb:YAG laser at room temperature
Author
Sumida, David S. ; Fan, T.Y.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
419
Abstract
One way to scale the Yb:YAG laser performance to high average power is to implement transverse or side diode pumping as opposed to an end-pumped geometry. To explore this scaling configuration, the authors have investigated the behavior of a side-pumped Yb:YAG geometry with a rack-and-stack InGaAs diode-array pump source. In the paper, the authors report the highest output pulse energy of ~50 mJ for a transversely diode-pumped Yb:YAG laser operating at room temperature at 1.03 μm
Keywords
ytterbium; 1.03 mum; 298 K; 50 mJ; InGaAs; YAG:Yb; YAl5O12:Yb; Yb:YAG laser; output pulse energy; rack-and-stack diode-array pump source; room temperature; scaling configuration; side diode pumping; side-pumped laser geometry; transversely diode-pumped laser; Diodes; Laser excitation; Laser transitions; Optical pulses; Power lasers; Pump lasers; Semiconductor laser arrays; Solid lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586647
Filename
586647
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