• DocumentCode
    3488092
  • Title

    A capacitance solver for incremental variation-aware extraction

  • Author

    El-Moselhy, Tarek A. ; Elfadel, Ibrahim M. ; Daniel, Luca

  • Author_Institution
    Res. Lab. in Electron., Massachusetts Inst. of Technol., Cambridge, MA
  • fYear
    2008
  • fDate
    10-13 Nov. 2008
  • Firstpage
    662
  • Lastpage
    669
  • Abstract
    Lithographic limitations and manufacturing uncertainties are resulting in fabricated shapes on wafer that are topologically equivalent, but geometrically different from the corresponding drawn shapes. While first-order sensitivity information can measure the change in pattern parasitics when the shape variations are small, there is still a need for a high-order algorithm that can extract parasitic variations incrementally in the presence of a large number of simultaneous shape variations. This paper proposes such an algorithm based on the wellknown method of floating random walk (FRW). Specifically, we formalize the notion of random path sharing between several conductors undergoing shape perturbations and use it as a basis of a fast capacitance sensitivity extraction algorithm and a fast incremental variational capacitance extraction algorithm. The efficiency of these algorithms is further improved with a novel FRW method for dealing with layered media. Our numerical examples show a 10X speed up with respect to the boundary-element method adjoint or finite-difference sensitivity extraction, and more than 560X speed up with respect to a non-incremental FRW method for a high-order variational extraction.
  • Keywords
    boundary-value problems; capacitance measurement; finite difference methods; perturbation theory; boundary-element method; capacitance; capacitance solver; extraction algorithm; finite-difference sensitivity extraction; floating random walk; high-order algorithm; incremental variation-aware extraction; layered media; lithography; pattern parasitics; random path sharing; shape perturbations; Computational complexity; Computational geometry; Conductors; Data mining; Finite difference methods; Parasitic capacitance; Random access memory; Recycling; Shape measurement; Stochastic resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4244-2819-9
  • Electronic_ISBN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2008.4681647
  • Filename
    4681647