• DocumentCode
    3488127
  • Title

    A wideband GaN HEMT distributed power amplifier for WiMAX applications

  • Author

    Lee, Yong-Sub ; Lee, Mun-Woo ; Jeong, Yoon-Ha

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang
  • fYear
    2008
  • fDate
    16-20 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we propose a high power and wideband dual-fed GaN HEMT DP A for 2.6 GHz WiMAX applications, which is implemented a push-pull GaN HEMT with the P1dB of 20 W to avoid circuit complexity and large size. From the measured results for a continuous wave (CW) and a WiMAX signal, the dual-fed GaN HEMT DPA shows wideband performances.
  • Keywords
    WiMax; distributed amplifiers; gallium compounds; high electron mobility transistors; power amplifiers; WiMAX; continuous wave signal; distributed power amplifier; frequency 2.6 GHz; power 20 W; push-pull HEMT; wideband HEMT; Bandwidth; Broadband amplifiers; Distributed amplifiers; Frequency; Gallium nitride; HEMTs; Performance gain; Power amplifiers; Power generation; WiMAX;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2008. APMC 2008. Asia-Pacific
  • Conference_Location
    Macau
  • Print_ISBN
    978-1-4244-2641-6
  • Electronic_ISBN
    978-1-4244-2642-3
  • Type

    conf

  • DOI
    10.1109/APMC.2008.4958371
  • Filename
    4958371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3488127