Title :
A wideband GaN HEMT distributed power amplifier for WiMAX applications
Author :
Lee, Yong-Sub ; Lee, Mun-Woo ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang
Abstract :
In this paper, we propose a high power and wideband dual-fed GaN HEMT DP A for 2.6 GHz WiMAX applications, which is implemented a push-pull GaN HEMT with the P1dB of 20 W to avoid circuit complexity and large size. From the measured results for a continuous wave (CW) and a WiMAX signal, the dual-fed GaN HEMT DPA shows wideband performances.
Keywords :
WiMax; distributed amplifiers; gallium compounds; high electron mobility transistors; power amplifiers; WiMAX; continuous wave signal; distributed power amplifier; frequency 2.6 GHz; power 20 W; push-pull HEMT; wideband HEMT; Bandwidth; Broadband amplifiers; Distributed amplifiers; Frequency; Gallium nitride; HEMTs; Performance gain; Power amplifiers; Power generation; WiMAX;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958371
