Title :
A 2.14GHz high efficiency GaAs pHEMT quasi class E transmission-line power amplifier
Author :
You, Fei ; He, Songbai ; Tang, Xiaohong
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Techonlogy of China, Chengdu
Abstract :
This paper presented the design of a high efficiency GaAs pHEMT power amplifier from a class E prototype. The experimental transmission-line amplifier was optimized for the highest drain efficiency, and it operated as a quasi class E amplifier. The optimized circuits were different from the ideal class E amplifier, but the prototype offered a starting point of the optimizations. The drain efficiency of 91.24%, PAE of 70.72%, and the output power of 31.48 dBm were measured at 2.14 GHz.
Keywords :
UHF amplifiers; gallium arsenide; power amplifiers; semiconductor materials; transmission lines; GaAs; drain efficiency; efficiency 70.72 percent; efficiency 91.24 percent; frequency 2.14 GHz; pHEMT quasi class E transmission-line power amplifier; Gallium arsenide; High power amplifiers; Microwave bands; PHEMTs; Power amplifiers; Power generation; Power measurement; Prototypes; Transmission lines; Voltage;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958372
