Quarter-micron optical gate 6″ power pHEMT technology

Author

Yuan, Cheng-Guan ; Tu, Der-Wei ; Liu, S. M Joseph ; Wu, Rex ; Huang, Jeff ; Chen, Frank ; Yeh, Shih-Wei ; Lai, William

Author_Institution

WIN Semicond. Corp., Kuei Shan

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A production ready pseudomorphic high electron mobility transistor (pHEMT) using i-line 0.25 mum optical gate lithography has been developed for both Ka- and Ku-band power applications. These 0.25 mum Ka- and Ku-version pHEMT devices demonstrate state-of-the-art power performance at 29 and 10 GHz, respectively. Excellent reliability has been achieved at channel temperature exceeding 275degC. Yield exceeding 95% is demonstrated for devices with 1.875 mm gate width across a 6-inch GaAs wafer. These results indicate that the 0.25 mum pHEMT technology is ready for high volume production with low cost at WIN Semiconductors.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photolithography; power HEMT; semiconductor device reliability; AlGaAs; GaAs; GaAs wafer; Ka-band power applications; Ku-band power applications; frequency 10 GHz; frequency 29 GHz; i-line optical gate lithography; pseudomorphic high electron mobility transistor; quarter-micron optical gate power pHEMT technology; reliability; size 0.25 mum; size 1.875 mm; size 6 inch; Costs; Electron mobility; Electron optics; Gallium arsenide; HEMTs; Lithography; MODFETs; PHEMTs; Production; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958374

Filename

4958374