Title :
Quarter-micron optical gate 6″ power pHEMT technology
Author :
Yuan, Cheng-Guan ; Tu, Der-Wei ; Liu, S. M Joseph ; Wu, Rex ; Huang, Jeff ; Chen, Frank ; Yeh, Shih-Wei ; Lai, William
Author_Institution :
WIN Semicond. Corp., Kuei Shan
Abstract :
A production ready pseudomorphic high electron mobility transistor (pHEMT) using i-line 0.25 mum optical gate lithography has been developed for both Ka- and Ku-band power applications. These 0.25 mum Ka- and Ku-version pHEMT devices demonstrate state-of-the-art power performance at 29 and 10 GHz, respectively. Excellent reliability has been achieved at channel temperature exceeding 275degC. Yield exceeding 95% is demonstrated for devices with 1.875 mm gate width across a 6-inch GaAs wafer. These results indicate that the 0.25 mum pHEMT technology is ready for high volume production with low cost at WIN Semiconductors.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photolithography; power HEMT; semiconductor device reliability; AlGaAs; GaAs; GaAs wafer; Ka-band power applications; Ku-band power applications; frequency 10 GHz; frequency 29 GHz; i-line optical gate lithography; pseudomorphic high electron mobility transistor; quarter-micron optical gate power pHEMT technology; reliability; size 0.25 mum; size 1.875 mm; size 6 inch; Costs; Electron mobility; Electron optics; Gallium arsenide; HEMTs; Lithography; MODFETs; PHEMTs; Production; Temperature;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958374
