High power X-band internally-matched AlGaN/GaN HEMT

Author

Wang, Y. ; Zhang, Z.G. ; Feng, Z. ; Li, J.Q. ; Song, J.B. ; Feng, Z.H. ; Cai, S.J.

Author_Institution

Hebei Semicond. Res. Inst., Shijiazhuang

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

High-performance internally-matched GaN HEMT with 0.3 mum gate length and 4times2.5 mm of the total gate width was successfully fabricated. The large signal RF characteristics of the internally-matched device were measured at 8 GHz. A maximum output power of 64.5 W, a gain of 7.2 dB and a peak power-added efficiency (PAE) of 40% was obtained, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; wide band gap semiconductors; AlGaN-GaN; efficiency 40 percent; frequency 8 GHz; gain 7.2 dB; high-performance internally-matched HEMT; high-power X-band; internally-matched device measurement; large-signal RF characteristics; peak power-added efficiency; power 64.5 W; size 0.3 mum; Aluminum gallium nitride; Bonding; Gallium nitride; HEMTs; Ohmic contacts; Power generation; RF signals; Radio frequency; Voltage; Wires; GaN HEMT; High power; Internal matching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958376

Filename

4958376