Title :
New encapsulation technique using standard DBC substrates technology
Author :
Carrere, P. ; Petitbon, A. ; Changey, N. ; Ranchy, E.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
This paper describes an innovative encapsulation technique dedicated to power integrated converters, allowing reduction of the cost, volume, and weight of the converters. This technique, using diode and IGBT chips (75-100 A, 350 to 1200 V) brazed on an aluminium nitride substrate, improves the thermal performances by reducing the number of interfaces between the chips and the cooling liquid. Moreover, a modular assembly has been developed using pressed electrical contacts. A 30 kW three-phase inverter is made to demonstrate the feasibility of this new technique
Keywords :
aluminium compounds; insulated gate bipolar transistors; invertors; power convertors; power semiconductor diodes; semiconductor device packaging; thermal analysis; 30 kW; 350 to 1200 V; 75 to 100 A; AlN3; DBC substrates; IGBT chips; aluminium nitride substrate; cost reduction; diode chips; direct bonding copper; encapsulation technique; modular assembly; power integrated converters; pressed electrical contacts; thermal performance improvement; three-phase inverter; volume reduction; weight reduction; Aluminum; Assembly; Contacts; Cooling; Costs; Encapsulation; Insulated gate bipolar transistors; Power electronics; Semiconductor device packaging; Substrates;
Conference_Titel :
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location :
Fukuoka
Print_ISBN :
0-7803-4489-8
DOI :
10.1109/PESC.1998.703470
