DocumentCode
3488257
Title
Thermal-aware reliability analysis for Platform FPGAs
Author
Mangalagiri, Prasanth ; Bae, Sungmin ; Krishnan, Ramakrishnan ; Xie, Yuan ; Narayanan, Vijaykrishnan
Author_Institution
Dept. of Comput. Sci. & Eng., Pennsylvania State Universiy, State College, PA
fYear
2008
fDate
10-13 Nov. 2008
Firstpage
722
Lastpage
727
Abstract
Increasing levels of integration in field programmable gate arrays, have resulted in high on-chip power densities, and temperatures. The heterogeneity of components and scaled feature sizes in platform FPGAs have made them vulnerable to various temperature dependent failure mechanisms. Hence, we need to introduce temperature awareness in tackling such failures that affect the lifetime reliability of FPGAs. In this paper, we present a dynamic thermal-aware reliability management (DTRM) framework to analyze the impact of temperature variations on the longterm/lifetime reliability of Platform FPGAs. We first study the temperature variations, both across and with-in designs, due to the use of various hard-blocks within a 65 nm platform FPGA. In the presence of such variations, we demonstrate the vulnerability of Platform FPGAs to two different hard-failures, namely, Electromigration, and time dependent dielectric breakdown (TDDB). We also analyze the performance degradation caused by Negative Bias Temperature Instability (NBTI) in the presence of thermal-variations. We validate the temperature variations estimated by the DTRM framework using a ring oscillator based real-time temperature measurement technique.
Keywords
electric breakdown; electromigration; field programmable gate arrays; integrated circuit reliability; dynamic thermal-aware reliability management; electromigration; field programmable gate arrays; lifetime reliability; on-chip power densities; platform FPGA; temperature dependent failure mechanisms; time dependent dielectric breakdown; Dielectric breakdown; Electromigration; Failure analysis; Field programmable gate arrays; Negative bias temperature instability; Niobium compounds; Performance analysis; Temperature dependence; Thermal degradation; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4244-2819-9
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2008.4681656
Filename
4681656
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