DocumentCode
3488303
Title
Integrated circuit design with NEM relays
Author
Chen, Fred ; Kam, Hei ; Markovic, Dejan ; Liu, Tsu-Jae King ; Stojanovic, Vladimir ; Alon, Elad
Author_Institution
Dept. of EECS, Massachusetts Inst. of Technol., Cambridge, MA
fYear
2008
fDate
10-13 Nov. 2008
Firstpage
750
Lastpage
757
Abstract
To overcome the energy-efficiency limitations imposed by finite sub-threshold slope in CMOS transistors, this paper explores the design of integrated circuits based on nano-electro-mechanical (NEM) relays. A dynamical Verilog-A model of the NEM relay is described and correlated to device measurements. Using this model we explore NEM relay design strategies for digital logic and I/O that can significantly improve the energy efficiency of the whole VLSI system. By exploiting the low effective threshold voltage and zero leakage achievable with these relays, we show that NEM relay-based adders can achieve an order of magnitude or more improvement in energy efficiency over CMOS adders with ns-range delays and with no area penalty. By applying parallelism, this improvement in energy-efficiency can be achieved at higher throughputs as well, at the cost of increased area. Similar improvements in high-speed I/O energy are also predicted by making use of the relays to implement highly energy-efficient digital-to-analog and analog-to-digital converters.
Keywords
CMOS integrated circuits; VLSI; hardware description languages; integrated circuit design; logic design; nanoelectromechanical devices; relays; CMOS transistors; NEM relays; VLSI system; Verilog-A model; analog-to-digital converters; digital-to-analog converters; integrated circuit design; nanoelectromechanical relays; Adders; CMOS integrated circuits; CMOS logic circuits; Digital relays; Energy efficiency; Hardware design languages; Integrated circuit measurements; Integrated circuit synthesis; Logic devices; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4244-2819-9
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2008.4681660
Filename
4681660
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