Title :
RF noise modeling of SiGe HBTs using four-port de-embedding method
Author :
Chen, Kun-Ming ; Chen, Han-Yu ; Huang, Guo-Wei ; Liao, Wen-Shiang ; Chang, Chun-Yen
Author_Institution :
Nat. Nano Device Labs., Hsinchu
Abstract :
A complete extraction technique of SiGe HBTs is developed to extract the base and collector current noises and their correlation. Unlike conventional methods, a four-port noise de- embedding technique is used to remove the influence of extrinsic elements. From the extraction results, we found that the base current noise and collector current noise can not be modeled well using 2qIB and 2qlc, respectively. By modifying the expressions of current noises, the noise performance of a SiGe HBT can be modeled more accurately.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; HBT; RF noise modeling; SiGe; current noises; four-port de-embedding method; Circuit noise; Data mining; Equivalent circuits; Germanium silicon alloys; Integrated circuit noise; Low-frequency noise; Noise figure; Radio frequency; Silicon carbide; Silicon germanium;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958381
