Title :
A switch-mode power amplifier in GaAs enhancement-mode pHEMT for WiMAX/WLAN applications
Author :
Wang, Shih-Ming ; Hsu, Yu-Cheng ; Chen, Cheng-Chung
Author_Institution :
Inf.&Commun. Res. Labs., Hsinchu
Abstract :
In this paper, we present one fully input and interstage matching class-AB power amplifier for WiMAX/WLAN (3.5GHz/2.45GHz) application. Each mode has its bias condition by the switching mechanism. Dual-band matching circuits are utilized to match the impedances and optimize the performance of each mode.
Keywords :
III-V semiconductors; WiMax; gallium arsenide; high electron mobility transistors; power amplifiers; wireless LAN; AB power amplifier; GaAs enhancement-mode pHEMT; WiMAX/WLAN application; dual-band matching circuits; interstage matching class; switch-mode power amplifier; switching mechanism; Circuits; Dual band; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Radio frequency; WiMAX; Wireless LAN; Wireless communication;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958383