Title :
Influence of gate width and gate finger towards noise figure of p-HEMT
Author :
Osman, M.N. ; Rahim, Abdul ; Yahya, M.R. ; Mat, A. F Awang
Author_Institution :
MENT, TM Res. & Dev. Sdn. Bhd., Cyberjaya
Abstract :
This study will try to get the percentage of noise figure improvement on specific HEMT layout within a region. The measurement result obtained will be analyzed according to the related theories and observations which are commonly occur in GaAs-based HEMT.
Keywords :
III-V semiconductors; gallium arsenide; power HEMT; semiconductor device noise; GaAs based HEMT; gate finger; gate width; noise figure; p-HEMT; Design optimization; Fingers; Frequency; HEMTs; III-V semiconductor materials; Millimeter wave technology; Noise figure; Noise generators; Roentgenium; Semiconductor device noise;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958386
