Title :
Fabrication of GaAs Gunn diodes using trench method
Author :
Kim, Mi-Ra ; Lee, Seong-Dae ; Lee, Jae-Seo ; Rhee, Jin-Koo ; Kim, Sam-Dong ; Kwak, No-Seung ; Chae, Yeon-sik ; Kim, Wan-Joo
Author_Institution :
Millimeter-wave INnovation Technol. Res. center (MINT), Dongguk Univ., Seoul
Abstract :
We developed the improved fabrication technology using the trench method for a graded-gap injector GaAs Gunn diode to avoid the formation of cracks which are caused by the difference in the thermal expansion coefficients between the GaAs epi-layer and the gold integral heat sink. We observed the negative-differential-resistance in the fabricated Gunn diode. The process we developed facilitates further process and handling because of the integral heat sink with thickness of 60 mum. Also, the formation of cracks in GaAs epi-layer was reduced during ohmic alloy process because of the reduced stress between the epi-wafer and the gold integral heat sink.
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; heat sinks; thermal expansion; GaAs; fabrication technology; gold integral heat sink; graded-gap injector Gunn diode; negative-differential-resistance; size 60 mum; thermal expansion coefficients; trench method; Anodes; Cathodes; Etching; Fabrication; Gallium arsenide; Gold; Gunn devices; Heat sinks; Metallization; Semiconductor diodes;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958387
