Fabrication of GaAs Gunn diodes using trench method

Author

Kim, Mi-Ra ; Lee, Seong-Dae ; Lee, Jae-Seo ; Rhee, Jin-Koo ; Kim, Sam-Dong ; Kwak, No-Seung ; Chae, Yeon-sik ; Kim, Wan-Joo

Author_Institution

Millimeter-wave INnovation Technol. Res. center (MINT), Dongguk Univ., Seoul

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We developed the improved fabrication technology using the trench method for a graded-gap injector GaAs Gunn diode to avoid the formation of cracks which are caused by the difference in the thermal expansion coefficients between the GaAs epi-layer and the gold integral heat sink. We observed the negative-differential-resistance in the fabricated Gunn diode. The process we developed facilitates further process and handling because of the integral heat sink with thickness of 60 mum. Also, the formation of cracks in GaAs epi-layer was reduced during ohmic alloy process because of the reduced stress between the epi-wafer and the gold integral heat sink.

Keywords

Gunn diodes; III-V semiconductors; gallium arsenide; heat sinks; thermal expansion; GaAs; fabrication technology; gold integral heat sink; graded-gap injector Gunn diode; negative-differential-resistance; size 60 mum; thermal expansion coefficients; trench method; Anodes; Cathodes; Etching; Fabrication; Gallium arsenide; Gold; Gunn devices; Heat sinks; Metallization; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958387

Filename

4958387