Title :
Switching loss analysis of shorted drain non punch-through and punch-through type IGBTs in voltage resonant circuit
Author :
Iwamuro, N. ; Hoshi, Y. ; Seki, Y. ; Kumagai, N.
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Nagano, Japan
Abstract :
The dissipated turn-off losses of shorted drain non-punch-through and punch-through type IGBTs (insulated-gate bipolar transistors) are investigated for voltage resonant circuit application. These characteristics are analyzed experimentally and calculated by using a two-dimensional device simulator. It is shown that the shorted drain structure is not effective for decreasing the dissipated loss, whereas the optimized punch-through type IGBT is suitable for this circuit application
Keywords :
circuit resonance; insulated gate bipolar transistors; losses; semiconductor device models; IGBTs; dissipated turn-off losses; nonpunchthrough devices; punch-through type; shorted drain; two-dimensional device simulator; voltage resonant circuit application; Boron; Conductivity; Epitaxial layers; Insulated gate bipolar transistors; MOSFETs; RLC circuits; Substrates; Switching circuits; Switching loss; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146104
