Title :
Two dimensional simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant
Author :
Hashim, M.D.R. ; Lever, R.F. ; Ashburn, P.
Author_Institution :
Univ. Sans Malaysia, Pulan Pinang, Malaysia
Abstract :
The effects of an extrinsic base implant in SiGe HBTs are investigated using two dimensional process and device simulation and measurements of collector current as a function of temperature. Point defects generated by the implant are shown to give rise to transient enhanced boron diffusion from the SiGe base around the emitter perimeter, which causes a geometry-dependent collector current. Methods for suppressing these effects are investigated
Keywords :
Ge-Si alloys; boron; diffusion; heterojunction bipolar transistors; ion implantation; point defects; semiconductor device models; semiconductor materials; semiconductor process modelling; 2D simulation; SiGe HBT; SiGe base; SiGe:B; extrinsic base implant; geometry-dependent collector current; point defects; suppression methods; transient enhanced B out-diffusion; two-dimensional simulation; Annealing; Boron; CMOS process; CMOS technology; Computational modeling; Current measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Medical simulation; Silicon germanium; Temperature;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647365
