Two dimensional simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant

Author

Hashim, M.D.R. ; Lever, R.F. ; Ashburn, P.

Author_Institution

Univ. Sans Malaysia, Pulan Pinang, Malaysia

fYear

1997

fDate

28-30 Sep 1997

Firstpage

96

Lastpage

99

Abstract

The effects of an extrinsic base implant in SiGe HBTs are investigated using two dimensional process and device simulation and measurements of collector current as a function of temperature. Point defects generated by the implant are shown to give rise to transient enhanced boron diffusion from the SiGe base around the emitter perimeter, which causes a geometry-dependent collector current. Methods for suppressing these effects are investigated

Keywords

Ge-Si alloys; boron; diffusion; heterojunction bipolar transistors; ion implantation; point defects; semiconductor device models; semiconductor materials; semiconductor process modelling; 2D simulation; SiGe HBT; SiGe base; SiGe:B; extrinsic base implant; geometry-dependent collector current; point defects; suppression methods; transient enhanced B out-diffusion; two-dimensional simulation; Annealing; Boron; CMOS process; CMOS technology; Computational modeling; Current measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Medical simulation; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3916-9

Type

conf

DOI

10.1109/BIPOL.1997.647365

Filename

647365