• DocumentCode
    3488836
  • Title

    Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors

  • Author

    Ooi, J.A. ; Ling, C.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • fYear
    1996
  • fDate
    26-28 Nov 1996
  • Firstpage
    19
  • Lastpage
    22
  • Abstract
    Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. Tungsten silicidation is shown to greatly improve the immunity of the MOS gate oxide to Fowler-Nordheim stress-induced charge generation and trapping. The silicidation process appears to have hardened the oxide to new trap creation
  • Keywords
    MOS capacitors; electron traps; elemental semiconductors; internal stresses; semiconductor device metallisation; silicon; silicon compounds; tungsten compounds; Fowler-Nordheim stress; MOS gate oxide; WSi-SiO2-Si; nonpolycided MOS capacitors; polycided MOS capacitors; silicidation process; stress-induced charge generation; stress-induced charge trapping; trap creation; CMOS technology; Current measurement; Electrons; Hydrogen; MOS capacitors; Silicidation; Stress; Tungsten; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    0-7803-3388-8
  • Type

    conf

  • DOI
    10.1109/SMELEC.1996.616443
  • Filename
    616443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3488836