Title :
The impact of Ge profile shape on the operation of SiGe HBT precision voltage references
Author :
Salmon, Stacey L. ; Cressler, John D. ; Jaeger, Richard C. ; Harame, David L.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
We analyze the effects of Ge grading on the bias and temperature characteristics of advanced UHV/CVD SiGe HBT´s. Theory, device measurements, and SPICE simulations are used to investigate the impact of the “Ge-ramp” effect on SiGe HBT precision voltage references. We conclude that conventional SPICE can be used to account for Ge ramp effects in SiGe HBT modeling. Given sufficient Ge grading, the Ge ramp effect can have a significant impact on the accuracy of precision voltage references and thus warrants attention
Keywords :
Ge-Si alloys; SPICE; bipolar analogue integrated circuits; doping profiles; heterojunction bipolar transistors; reference circuits; semiconductor device models; semiconductor materials; Ge grading; Ge profile shape; Ge ramp effects; HBT precision voltage references; SPICE simulations; SiGe; SiGe HBT modeling; UHV/CVD SiGe HBT; bias characteristics; device measurements; temperature characteristics; Circuits; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; SPICE; Shape; Silicon germanium; Temperature; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647366
