Title :
An equivalent circuit model for the recovery component of BTI
Author :
Martin-Martinez, J. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X. ; Kaczer, B. ; Groeseneken, G.
Abstract :
In this work an equivalent circuit for the recoverable component of BTI is proposed. The circuit, based on diodes and capacitors for easy incorporation into circuit simulations, is able to reproduce correctly the stress, relaxation, voltage, frequency and duty factor dependences of the BTI-recovery previously reported. In addition, the model characteristics allow the extrapolation of BTI effects to very long stress times. BTI effects in a CMOS invertor have been studied using this model.
Keywords :
CMOS integrated circuits; invertors; CMOS invertor; bias temperature instability; capacitors; circuit simulations; diodes; equivalent circuit model; extrapolation; recovery component; Capacitors; Circuit simulation; Diodes; Equivalent circuits; Extrapolation; Frequency; Inverters; Semiconductor device modeling; Stress; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681697
