Title :
Design of rugged High Voltage high power P-channel silicon MOSFET for plasma applications
Author :
Zhang, Jinshu ; Sdrulla, Dumitru ; Tsang, Dahwen ; Frey, Dick ; Krausse, George
Author_Institution :
Microsemi Power Product Group, Microsemi Corp., Bend, OR
Abstract :
High voltage P-channel RF MOSFET was designed and fabricated by a proprietary self-aligned VDMOS process. When this device is used for class C application at an operating frequency of 40.68 MHz and drain bias of 125 V, the CW output power can reach 350 W, and power gain is 18 dB. Therefore, this 500 V P-channel MOSFET can be used as high side switch transistor in half bridge circuit to generate more RF power for plasma applications up to 40.68 MHz.
Keywords :
MOSFET; elemental semiconductors; semiconductor device testing; silicon; RF power; Si; frequency 40.68 MHz; half bridge circuit; high power; high side switch transistor; high voltage; p-channel silicon MOSFET; self-aligned VDMOS process; voltage 125 V; voltage 500 V; Gain; MOSFET circuits; Plasma applications; Power MOSFET; Power generation; Radio frequency; Silicon; Switches; Switching circuits; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681701
