DocumentCode :
3488980
Title :
Poly-Si stripe TFTs by grain-boundary controlled crystallization of amorphous-Si
Author :
Brunets, Ihor ; Holleman, Jisk ; Kovalgin, Alexey Y. ; Schmitz, Jurriaan
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
87
Lastpage :
90
Abstract :
In this work, we fabricated high-performance P- and N-channel poly-Si TFTs with 16-nm gate dielectric (ALD Al2O3) at temperatures not exceeding 550degC. Using preformed a-Si lines, the grain boundaries formed during laser crystallization were predominantly location-controlled. A diode-pumped Yb:YAG thin disk green laser was used for crystallization and dopant activation. The film crystallinity was characterized with electron backscatter diffraction (EBSD). The sheet resistance of the crystallized films was studied as a function of the laser treatment energy, the location, and the orientation. The realized TFTs exhibited a field-effect mobility of 51.5 cm2/Vs and 61.9 cm2/Vs, and a subthreshold swing of 0.14 and 0.16 V/decade for p- and n-channel devices, respectively.
Keywords :
crystallisation; electron diffraction; elemental semiconductors; grain boundaries; silicon; thin film transistors; Al2O3; Si; amorphous silicon; crystallized films; diode-pumped Yb:YAG thin disk green laser; dopant activation; electron backscatter diffraction; field-effect mobility; film crystallinity; gate dielectric; grain-boundary controlled crystallization; laser crystallization; laser treatment energy; n-channel device; p-channel device; polysilicon stripe thin film transistor; sheet resistance; Absorption; Amorphous materials; Crystallization; Grain boundaries; Optical control; Pulsed laser deposition; Semiconductor films; Silicon; Substrates; Temperature control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
ISSN :
1930-8876
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2008.4681705
Filename :
4681705
Link To Document :
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