DocumentCode :
3488999
Title :
Monolithic integration of CMOS VLSI and CNT for hybrid nanotechnology applications
Author :
Akinwande, Deji ; Yasuda, Shinichi ; Paul, Bipul ; Fujita, Shinobu ; Close, Gael ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
91
Lastpage :
94
Abstract :
We integrate carbon nanotube (CNT) fabrication with commercial CMOS VLSI fabrication on a single substrate suitable for emerging hybrid nanotechnology applications. This co-integration combines the inherent advantages of CMOS and CNTs. These emerging applications include CNT optical, biological, chemical, and gas sensors that require complex CMOS electronics for sensor control, calibration, and signal processing of sensor output. We demonstrate the successful co-integration on a single chip with a vehicle circuit; a two transistor cascode megahertz amplifier utilizing both silicon nMOS and CNT transistors.
Keywords :
CMOS integrated circuits; VLSI; amplifiers; carbon nanotubes; elemental semiconductors; nanotube devices; silicon; C; CMOS; Si; VLSI; carbon nanotube; monolithic integration; silicon nMOS transistors; transistor cascode megahertz amplifier; vehicle circuit; Biosensors; Carbon nanotubes; Chemical and biological sensors; Gas detectors; Monolithic integrated circuits; Nanotechnology; Optical device fabrication; Optical sensors; Optical signal processing; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
ISSN :
1930-8876
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2008.4681706
Filename :
4681706
Link To Document :
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