DocumentCode
3489055
Title
Novel wide-emitter SiGe HBT technology for RF power applications
Author
Washio, Katsuyoshi ; Shimamoto, Hiromi ; Miura, Makoto ; Oda, Katsuya
Author_Institution
Central Res. Lab., Hitachi, Ltd., Tokyo
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
103
Lastpage
106
Abstract
A novel SiGe HBT, featuring emitter-width-tolerable DC and RF performance, for RF power applications is proposed. This transistor, with a bow-tie-shaped base structure, allows large tolerance for emitter widths from 0.2 to 0.75 mum. Its validity for having nearly constant high-frequency performance, in terms of cutoff frequency and maximum oscillation frequency of about 100 GHz, and low base resistance, even with a wide emitter, is confirmed.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; DC performance; RF performance; SiGe; Wide-Emitter SiGe HBT; bow-tie-shaped base structure; cutoff frequency; low base resistance; maximum oscillation frequency; size 0.2 mum to 0.75 mum; transistor; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Microwave technology; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location
Edinburgh
ISSN
1930-8876
Print_ISBN
978-1-4244-2363-7
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2008.4681709
Filename
4681709
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