Dependence of dielectric charging on film thickness and deposition conditions

Author

Daigler, Richard ; Papandreou, Eleni ; Tavassolian, Negar ; Koutsoureli, Matroni ; Papaioannou, George ; Papapolymerou, Ioannis

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The electrical properties of thin film SiN_x that has been deposited with PECVD method at 150°C and 250°C are investigated on evaporated and electroplated Au substrates. The aim is to extract the parameters that can be introduced in modeling and simulation tools for MEMS design. The present work provides information on the dielectric charging and its dependence on the film thickness, the deposition conditions, the substrate roughness and metallic contacts.

Keywords

dielectric thin films; plasma CVD; silicon compounds; Au; PECVD; SiN_x; deposition conditions; dielectric charging; electrical properties; electroplated substrate; evaporated substrate; film thickness; metallic contacts; substrate roughness; temperature 150 degC; temperature 250 degC; thin film; Dielectric films; Dielectric materials; Dielectric substrates; Dielectric thin films; MIM capacitors; Micromechanical devices; Rough surfaces; Surface charging; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958446

Filename

4958446