Title :
Accounting for experimentally observed transients in simulation of partially-depleted SOI MOSFET´s
Author :
Wei, Andy ; Sherony, Melanie J. ; Antoniadis, Dimitri A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
This paper has shown that a unique set of carrier lifetime and impact ionization rate can be used to account for both the transient behavior and DC I-V characteristics of a partially-depleted SOI MOSFET. Operation of these devices at low to moderate drain voltages ( 1.0 to 2.0 V) was shown to be strongly related to both impact ionization rate and carrier lifetime
Keywords :
MOSFET; carrier lifetime; impact ionisation; semiconductor device models; silicon-on-insulator; simulation; transient analysis; transient response; 1 to 2 V; DC I-V characteristics; Si; carrier lifetime; impact ionization rate; partially-depleted SOI MOSFET; simulation; transient behavior; transients; Charge carrier lifetime; Contracts; Current measurement; Electrons; Frequency measurement; Impact ionization; MOSFET circuits; Pulse measurements; Time measurement; Voltage;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526433
